| 发明名称 | Semiconductor device with diffusion barrier film and method of manufacturing the same | ||
| 摘要 | A method of forming a diffusion barrier film over fins and the resulting device are provided. Embodiments include forming silicon fins over a substrate; depositing a borosilicate glass (BSG) liner cap over a first set of the silicon fins; depositing a phosphosilicate (PSG) liner cap over a second set of the silicon fins; and depositing a silicon oxycarbide (SiOC) diffusion barrier film over the BSG and PSG liner caps. | ||
| 申请公布号 | US9330982(B1) | 申请公布日期 | 2016.05.03 |
| 申请号 | US201514826276 | 申请日期 | 2015.08.14 |
| 申请人 | GLOBALFOUNDRIES INC. | 发明人 | Cao Huy;Srivathanakul Songkram;Liu Jinping;Jung In Soo |
| 分类号 | H01L21/8238;H01L21/02;H01L21/324;H01L27/092 | 主分类号 | H01L21/8238 |
| 代理机构 | Ditthavong & Steiner, P.C. | 代理人 | Ditthavong & Steiner, P.C. |
| 主权项 | 1. A method comprising: forming silicon fins over a substrate; depositing a borosilicate glass (BSG) liner cap over a first set of the silicon fins;depositing a phosphosilicate glass (PSG) liner cap over a second set of the silicon fins; and depositing a silicon oxycarbide (SiOC) diffusion barrier film over the BSG and PSG liner caps. | ||
| 地址 | Grand Cayman KY | ||