| 发明名称 | Method for forming HfOx film based on atomic layer deposition (ALD) process | ||
| 摘要 | A method for forming a HfOx film based on atomic layer deposition (ALD) process includes: providing a substrate; dividing a plurality of ALD cycles as needed into multiple depositing stages, wherein each of the ALD cycles includes applying HfCl4 pulse and applying H2O pulse over the substrate and a content ratio of HfCl4 to H2O is different and increasing for the depositing stages; and performing the depositing stages to form a HfOx film. | ||
| 申请公布号 | US9330902(B1) | 申请公布日期 | 2016.05.03 |
| 申请号 | US201514731227 | 申请日期 | 2015.06.04 |
| 申请人 | United Microelectronics Corp. | 发明人 | Wen Tsai-Yu;Chen Shih-Cheng;Ye Shan;Lu Tsuo-Wen;Wang Yu-Ren |
| 分类号 | H01L21/3205;H01L21/02;H01L29/66;H01L29/51;H01L21/28 | 主分类号 | H01L21/3205 |
| 代理机构 | J.C. Patents | 代理人 | J.C. Patents |
| 主权项 | 1. A method for forming a HfOx film based on atomic layer deposition (ALD) process, comprising: providing a substrate; dividing a plurality of ALD cycles as needed into multiple depositing stages, wherein each of the ALD cycles comprises applying HfCl4 pulse and applying H2O pulse over the substrate and a content ratio of HfCl4 to H2O is different and increasing for the depositing stages; and performing the depositing stages to form a HfOx film. | ||
| 地址 | Hsinchu TW | ||