Three dimensional stacked nonvolatile semiconductor memory

摘要

A three dimensional stacked nonvolatile semiconductor memory according to an example of the present invention includes a memory cell array comprised of first and second blocks disposed side by side in a first direction, and a driver disposed on one end of the memory cell array in a second direction orthogonal to the first direction. First select gate lines in the first block and first select gate lines in the second block are connected to the driver after they are commonly connected in one end in the second direction of the memory cell array in a relation of one to one.

主权项

1. A nonvolatile semiconductor memory comprising:
a first unit including a first memory cell and a first selection transistor in a first block; a second unit including a second memory cell and a second selection transistor in a second block, a gate of the second selection transistor being electrically connected to a gate of the first selection transistor; a first line electrically connected to a gate of the first memory cell; a second line electrically connected to a gate of the second memory cell; and a third line electrically connected to gates of the first and second selection transistors, the gate of the first selection transistor being connected to the gate of the second selection transistor without intervention of any transistors.