Non-volatile latch using spin-transfer torque memory device

摘要

Described is an apparatus of a non-volatile logic (NVL), the apparatus comprises: a sensing circuit to sense differential resistance; a first magnetic-tunneling-junction (MTJ) device coupled to the sensing circuit; a second MTJ device coupled to the sensing circuit, the first and second MTJ devices operable to provide differential resistance; and a buffer to drive complementary signals to the first and second MTJ devices respectively.

主权项

1. An apparatus comprising:
a sensing circuit to sense differential resistance; a first magnetic-tunneling-junction (MTJ) device having a first terminal and a second terminal; a second MTJ device having a first terminal and a second terminal,
the first and second MTJ devices operable to provide differential resistance,the sensing circuit coupled to the first terminals of the first and second MTJ devices; a buffer coupled to the first terminals of the first and second MTJ devices to generate an inverted version of an input data on the first terminal of the first MTJ device and a buffered version of the input data on the first terminal of the second MTJ device; and a pulse generator to generate self-timed signal to initialize the sensing circuit.