发明名称 Method for manufacturing substrate
摘要 A method for manufacturing a substrate is provided. The method includes irradiating a single crystal substrate with a beam of laser or charged particles while moving an irradiation point of the beam with respect to the single crystal substrate so that a trajectory of the irradiation point on a surface of the single crystal substrate describes a striped pattern of straight lines. Non-crystalline regions are formed in the single crystal substrate along the trajectory. The irradiation is repeated multiple times so that directions of the striped patterns are different from each other among the multiple times of irradiation. The repetition of the irradiation changes warpage of the single crystal substrate. All of directions of the straight lines described in the multiple times of irradiation are not parallel to any of directions of crystal axes of the single crystal substrate in a plane parallel to the surface.
申请公布号 US9330919(B1) 申请公布日期 2016.05.03
申请号 US201514853114 申请日期 2015.09.14
申请人 TOYOTA JIDOSHA KABUSHIKI KAISHA 发明人 Kurokawa Yuto
分类号 H01L21/20;H01L21/26;H01L29/06;H01L21/268;H01L21/02;H01L21/762;H01L21/67 主分类号 H01L21/20
代理机构 Oliff PLC 代理人 Oliff PLC
主权项 1. A method for manufacturing a substrate, the method comprising: irradiating a single crystal substrate with a beam of laser or charged particles while moving an irradiation point of the beam with respect to the single crystal substrate so that a trajectory of the irradiation point on a surface of the single crystal substrate describes a striped pattern of straight lines, and non-crystalline regions being formed in the single crystal substrate along the trajectory, wherein the irradiation is repeated multiple times so that directions of the striped patterns are different from each other among the multiple times of irradiation, the repetition of the irradiation changes warpage of the single crystal substrate, and in the irradiation of multiple times, all of directions of the straight lines described in the multiple times of irradiation are not parallel to any of directions of crystal axes of the single crystal substrate in a plane parallel to the surface.
地址 Toyota JP