| 发明名称 | Method for forming an optical modulator | ||
| 摘要 | According to embodiments of the present invention, a method for forming an optical modulator is provided. The method includes providing a substrate, implanting dopants of a first conductivity type into the substrate to form a first doped region, implanting dopants of a second conductivity type into the substrate to form a second doped region, wherein a portion of the second doped region is formed over and overlaps with a portion of the first doped region to form a junction between the respective portions of the first doped region and the second doped region, and wherein a remaining portion of the second doped region is located outside of the junction, and forming a ridge waveguide, wherein the ridge waveguide overlaps with at least a part of the junction. | ||
| 申请公布号 | US9329415(B2) | 申请公布日期 | 2016.05.03 |
| 申请号 | US201314071820 | 申请日期 | 2013.11.05 |
| 申请人 | Agency for Science, Technology and Research | 发明人 | Song Jun-Feng;Luo Xianshu;Tu Xiaoguang;Lo Patrick Guo-Qiang;Yu Mingbin |
| 分类号 | G02F1/025;G02B6/12;H01L29/15;H01P11/00;H01L21/3215;H01L21/321;H01L29/49 | 主分类号 | G02F1/025 |
| 代理机构 | Winstead, P.C. | 代理人 | Winstead, P.C. |
| 主权项 | 1. A method for forming an optical modulator, the method comprising: providing a substrate comprising a buried oxide layer; implanting dopants of a first conductivity type into the substrate to form a first doped region; implanting dopants of a second conductivity type into the substrate to form a second doped region; wherein a portion of the second doped region is formed over and overlaps with a portion of the first doped region to form a junction between the respective portions of the first doped region and the second doped region, wherein the respective portions of the first doped region and the second doped region are in contact with each other, wherein a remaining portion of the second doped region is located outside of the junction and formed over an intrinsic region of the substrate, wherein a bottom surface of the remaining portion of the second doped region overlaps and is directly on a top surface of the intrinsic region, wherein the first doped region, the second doped region and the intrinsic region are formed over the buried oxide layer; and wherein the intrinsic region is in between the remaining portion of the second doped region and the buried oxide layer; and forming a ridge waveguide, wherein the ridge waveguide overlaps with at least a part of the junction. | ||
| 地址 | Singapore SG | ||