Deep level transient spectrometer

摘要

A method for detecting surface and bulk deep states in semiconductor materials is provided. In various embodiments, the method comprises configuring a detection circuit of charge based deep level transient spectrometer in one of a parallel mode and a series mode by controlling the configuration of a switching circuit of the detection circuit. The method additionally comprises generating digitized voltage charge outputs of a device under test utilizing the detection circuit as controlled via execution of an analog-to-digital conversion and timing program by a control system of the charge based deep level transient spectrometer. Furthermore, the method comprises obtaining desired information about deep level transients of the device under test based on the digitized voltage charge outputs via execution of a control system operable to execute a Q-DLTS data analysis program by the control system.

主权项

1. A method for detecting surface and bulk deep states in semiconductor materials, said method comprising:
setting a switch of a switching device of a detection circuit of charge based deep level transient spectrometer to one of a closed position to configure the detection circuit in a parallel mode, wherein the the detection circuit is configured to test a first type of semiconductor material, and an open position to configure the detection circuit in a series mode, wherein the the detection circuit is configured to test a first type of semiconductor material, inputting, via a user interface of the detection circuit user defined inputs, the user defined inputs comprising:
a charging time during which traps of a device under test will be excited;a delay time during which integration of charge outputs from the device under test will wait to avoid the integration of switching transients;a read period for defining a duration of a single cycle for the excitation of the traps and a discharge of the charge output of the device under test;a number of sample array averages defining a number of iterations that a sample amplitude array parameter is averaged to increase the signal-to-noise ratio;a sampling rate defining a number of samples per unit time taken from a voltage charge output signal which are used to populate an amplitude and time array; anda number of samples points defining a size of the amplitude and time array; inputting to the device under test, via a data acquition module of the detection circuit, excitation voltage pulses based on the input user defined inputs and the switch setting, and via execution of an analog-to-digital conversion and timing program by a control system of the charge based deep level transient spectrometer; sampling, via the data acquistion module, digitized voltage charge outputs of the device under test generated in response to the input excitation voltage pulses, based on the user inputs and via execution of the analog-to-digital conversion and timing program by the control system; and obtaining at least one of a trap density, a trap emission rate, and a trap activation energy for deep level transients of the device under test based on the digitized voltage charge outputs via execution of a Q-DLTS data analysis program by the control system.