Semiconductor device comprising an antiferroelectric gate insulating film

摘要

A semiconductor device having a transistor gate length greatly reduced as a result of promotion of semiconductor integrated circuit miniaturization where leakage current generation in a gate insulating film can be inhibited to enhance the transistor function. The semiconductor device includes: a semiconductor substrate having a main surface; a pair of source/drain regions formed over the main surface of the semiconductor substrate; a gate insulating film formed, over a region between the pair of source/drain regions, to be in contact with the main surface; and a gate electrode formed to be in contact with the upper surface of the gate insulating film. In the semiconductor device, the gate electrode has a length of less than 45 nm in a direction from a first one of the pair of source/drain regions to a second one of the pair of source/drain regions, and the gate insulating film has an antiferroelectric film.

主权项

1. A semiconductor device, comprising:
a semiconductor substrate having a main surface; source and drain regions formed in the main surface of the semiconductor substrate; a gate insulating film formed, over a region between the source and drain regions, to be in contact with the main surface; and a gate electrode formed to be in contact with an upper surface of the gate insulating film and having a length of less than 45 nm and greater than zero in a direction from the source region to the drain region so as to make a transistor function, wherein the source and drain regions, the gate insulating film, and the gate electrode configure the transistor, and wherein the gate insulating film has an antiferroelectric film including at least one selected from a group of Pb(In0.5Nb0.5)O3, NH4H2PO4, and NH4H2AsO4.