Nonvolatile semiconductor storage device and method for manufacturing the same

摘要

According to an aspect of the present invention, there is provided a nonvolatile semiconductor storage device including: a semiconductor substrate; a source region and a drain region that are formed in the semiconductor substrate so as to be separated from each other and so as to define a channel region therebetween; a tunnel insulating film that is formed on the channel region; an insulative charge storage film that is formed on the tunnel insulating film; a conductive charge storage film that is formed on the insulative charge storage film so as to be shorter than the insulative charge storage film in a channel direction; an interlayer insulating film that is formed on the conductive charge storage film; and a gate electrode that is formed on the interlayer insulating film.

主权项

1. A nonvolatile semiconductor storage device, comprising:
a semiconductor substrate including a channel region; a tunnel insulating film formed on the channel region; a charge storage layer formed on the tunnel insulating film; an interlayer insulating film formed on the charge storage layer; a control gate formed on the interlayer insulating film; and an insulating film insulating a side surface of the charge storage layer, wherein the charge storage layer comprises a conductive layer and an insulating layer; an end portion of the insulating layer extends beyond an end portion of the conductive layer in a direction of the side surface; the insulating film includes
a first portion insulating a side surface of the insulating layer, anda second portion insulating a side surface of the conductive layer and at least a part of another surface of the insulating layer extending beyond the side surface of the conductive layer; and the first portion and the second portion comprise a same material.