| 发明名称 | MRAM with magnetic material surrounding contact plug | ||
| 摘要 | An electronic device includes semiconductor memory, and the semiconductor memory includes a contact plug which is disposed over a substrate and extends in a vertical direction; a variable resistance element which is coupled to the contact plug and includes a first magnetic layer having a variable magnetization direction, a second magnetic layer having a pinned magnetization direction, and a tunnel barrier layer interposed between the first magnetic layer and the second magnetic layer; and a third magnetic layer which surrounds a sidewall of the contact plug and has a same magnetization direction as the second magnetic layer. | ||
| 申请公布号 | US9330744(B2) | 申请公布日期 | 2016.05.03 |
| 申请号 | US201414448695 | 申请日期 | 2014.07.31 |
| 申请人 | SK hynix Inc. | 发明人 | Park Ji-Ho |
| 分类号 | G11C11/16;H01L43/08;H01L27/22 | 主分类号 | G11C11/16 |
| 代理机构 | Perkins Coie LLP | 代理人 | Perkins Coie LLP |
| 主权项 | 1. An electronic device comprising semiconductor memory, wherein the semiconductor memory includes: a contact plug which is disposed over a substrate and extends in a vertical direction perpendicular to the substrate; a variable resistance element which is coupled to the contact plug and includes a first magnetic layer having a variable magnetization direction, a second magnetic layer having a pinned magnetization direction, and a tunnel barrier layer interposed between the first magnetic layer and the second magnetic layer; and a third magnetic layer which surrounds a sidewall of the contact plug and has the same magnetization direction as the second magnetic layer, wherein the third magnetic layer offsets an influence of a magnetic field generated by the second magnetic layer. | ||
| 地址 | Icheon-Si KR | ||