| 摘要 |
An Fe—Pt-based ferromagnetic material sputtering target comprising a metal and a metal oxide, wherein the metal has a composition in which Pt is contained in an amount of 5 mol % or more and 60 mol % or less and the remainder is Fe. An object of the present invention is to provide a ferromagnetic material sputtering target, which enables to form a magnetic recording layer composed of a magnetic phase such as an Fe—Pt alloy, and a non-magnetic phase to isolate the magnetic phase, and in which a metal oxide is used as one of the materials for the non-magnetic phase. Provided is a ferromagnetic material sputtering target wherein an inadvertent release of the metal oxide during sputtering and particle generation due to abnormal electrical discharge starting at a void inherently included in the target are suppressed, the adherence between the metal oxide and the matrix alloy is enhanced, and its density is increased. |
| 主权项 |
1. An Fe—Pt-based ferromagnetic material sputtering target, comprising:
a metal alloy forming a matrix of the sputtering target; and grains of a metal oxide dispersed in the matrix of the metal alloy, the grains of the metal oxide having a grain size of 0.1 to 50 μm, and the total content of grains of the metal oxide forming 15 to 70 vol % of the sputtering target; wherein the metal alloy has a composition of 5 to 60 mol % Pt, 0.5 to 20 mol % C, and a remainder of Fe; and wherein the metal oxide is an oxide of at least one metal selected from the group consisting of Zr, Mg, Ti, Al, B, Ta, Nb, Zn, Si, Cr, Mn, and Ga. |
