| 发明名称 | Memristive element and electronic memory based on such elements | ||
| 摘要 | The invention relates to a memristive element (M) formed by: a first electrode (10); a second electrode (30); and an active region (20) making direct electrical contact with said first and second electrodes, characterized in that said active region essentially consists of a thin film of an insertion compound containing at least one alkali metal, said compound being an oxide or chalcogenide of at least one transition metal and being able to conduct both electrons and ions. Non-volatile electronic memory formed from a plurality of such memristive elements. | ||
| 申请公布号 | US9331274(B2) | 申请公布日期 | 2016.05.03 |
| 申请号 | US201113994936 | 申请日期 | 2011.12.14 |
| 申请人 | Centre National de la Recherche Scientifique;Commissariat a L'Energie Atomique et aux Energies Alternatives;Universite Paris—SUD 11 | 发明人 | Moradpour Alexandre;Schneegans Olivier;Revcolevschi Alexandre;Franger Sylvain;Salot Raphaël |
| 分类号 | H01L45/00 | 主分类号 | H01L45/00 |
| 代理机构 | Alston & Bird LLP | 代理人 | Alston & Bird LLP |
| 主权项 | 1. A memristive element (M) formed by: a first electrode; a second electrode; and an active region consisting of a thin film of an insertion compound of at least one alkali metal, made of an oxide or chalcogenide of at least one transition metal, exhibiting conductivity that is both electronic and ionic in nature, said active region making direct electrical contact with said first and second electrodes, wherein said first electrode is a surface of a degenerate semiconductor substrate. | ||
| 地址 | Paris FR | ||