发明名称 |
Magnetic field controlled reconfigurable semiconductor logic device and method for controlling the same |
摘要 |
A non-volatile reconfigurable logic device executing logical operations and a memory function and controlled by a magnetic field is provided. The reconfigurable logic device includes i) at least one semiconductor device; and ii) a pair of magnetic field controlled devices respectively spaced apart from both sides of the semiconductor device and that are adapted to generate magnetic field leakage to control the semiconductor device. The semiconductor device includes i) a first semiconductor layer; and ii) a second semiconductor layer located on the first semiconductor layer. One of the first semiconductor layer and the second semiconductor layer is a p-type semiconductor layer and the other is an n-type semiconductor layer. |
申请公布号 |
US9331266(B2) |
申请公布日期 |
2016.05.03 |
申请号 |
US201314132492 |
申请日期 |
2013.12.18 |
申请人 |
KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY;THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF THE NAVY |
发明人 |
Chang Joon Yeon;Hong Jin Ki;Song Jin Dong;Johnson Mark |
分类号 |
H03K19/173;H01L43/02;H01L27/22;H03K19/0175;H03K19/16;H01L43/08;G11C11/16 |
主分类号 |
H03K19/173 |
代理机构 |
NSIP Law |
代理人 |
NSIP Law |
主权项 |
1. A reconfigurable logic device, comprising:
at least one semiconductor device; and a pair of magnetic field controlled devices respectively spaced apart from both sides of the semiconductor device and that are adapted to generate magnetic field leakage to control the semiconductor device, wherein the semiconductor device includes a first semiconductor layer, and a second semiconductor layer located on the first semiconductor layer, and wherein one of the first semiconductor layer and the second semiconductor layer is a p-type semiconductor layer and the other is an n-type semiconductor layer. |
地址 |
Seoul KR |