Controlled epitaxial boron nitride growth for graphene based transistors

摘要

We have demonstrated controlled growth of epitaxial h-BN on a metal substrate using atomic layer deposition. This permits the fabrication of devices such as vertical graphene transistors, where the electron tunneling barrier, and resulting characteristics such as ON-OFF rate may be altered by varying the number of epitaxial layers of h-BN. Few layer graphene is grown on the h-BN opposite the metal substrate, with leads to provide a vertical graphene transistor that is intergratable with Si CMOS technology of today, and can be prepared in a scalable, low temperature process of high repeatability and reliability.

主权项

1. A vertical graphene transistor comprising:
a metal substrate, multiple layers of epitaxial hexagonal Boron Nitride (h-BN) there over, and a layer of graphene formed on said h-BN opposite the metal substrate, wherein said h-BN is comprised of a number of epitaxial layers of h-BN sufficient to provide a barrier layer thickness to develop predetermined ON-OFF rates and lateral mobility in excess of 2000 cm2/V-sec.