Manufacturing method for forming semiconductor structure

摘要

The present invention provides a manufacturing method of a semiconductor structure, comprising the following steps. First, a substrate is provided, a first dielectric layer is formed on the substrate, a metal gate is disposed in the first dielectric layer and at least one source/drain region (S/D region) is disposed on two sides of the metal gate, a second dielectric layer is then formed on the first dielectric layer, a first etching process is then performed to form a plurality of first trenches in the first dielectric layer and the second dielectric layer, wherein the first trenches expose each S/D region. Afterwards, a salicide process is performed to form a salicide layer in each first trench, a second etching process is then performed to form a plurality of second trenches in the first dielectric layer and the second dielectric layer, and the second trenches expose the metal gate.

主权项

1. A manufacturing method of a semiconductor device, at least comprising the following steps:
providing a substrate, wherein a first dielectric layer is formed on the substrate, at least one metal gate is formed in the first dielectric layer and at least one source drain region (S/D region) is disposed on two sides of the metal gate; forming a second dielectric layer on the first dielectric layer; performing a first etching process to form a plurality of first trenches in the first dielectric layer and the second dielectric layer, wherein each first trench exposes each S/D region; performing a salicide process to form a salicide layer in each first trench; and performing a second etching process to form a plurality of second trenches in the first dielectric layer and the second dielectric layer, wherein each second trench exposes each metal gate.