发明名称 Semiconductor device manufacturing method and semiconductor device
摘要 A plurality of protruding electrodes of a semiconductor chip are in contact with a plurality of electrodes formed on a semiconductor substrate, via a plurality of solder sections. In this state, the solder sections are melted so as to form a plurality of solder bonding sections joined to the protruding electrodes of the semiconductor chip and the electrodes of the semiconductor substrate. Moreover, a distance between a part of the semiconductor chip and the semiconductor substrate is larger than a distance between the other part of the semiconductor chip and the semiconductor substrate, extending at least some of the solder bonding sections. Thus, the solder bonding sections vary in height. Holes are then formed at least in a solder bonding section having a maximum height out of the solder bonding sections. After that, the solder bonding sections are solidified.
申请公布号 US9331042(B2) 申请公布日期 2016.05.03
申请号 US201214360228 申请日期 2012.11.16
申请人 PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD. 发明人 Sakurai Daisuke;Usirokawa Kazuya
分类号 H01L23/488;H01L23/00 主分类号 H01L23/488
代理机构 Hamre, Schumann, Mueller & Larson, P.C. 代理人 Hamre, Schumann, Mueller & Larson, P.C.
主权项 1. A semiconductor device manufacturing method for manufacturing a semiconductor device in which a semiconductor chip having a plurality of protruding electrodes is mounted on a semiconductor substrate, the method comprising: a first step of forming a plurality of solder bonding sections that join the protruding electrodes of the semiconductor chip and a plurality of electrodes on the semiconductor substrate by melting a plurality of solder sections in a state in which the protruding electrodes of the semiconductor chip are in contact with the electrodes on the semiconductor substrate via the solder sections; a second step of causing the solder bonding sections to vary in height by extending at least some of the solder bonding sections while a distance between a part of the semiconductor chip and the semiconductor substrate is larger than a distance between the other part of the semiconductor chip and the semiconductor substrate; a third step of forming holes at least in the solder bonding section having a maximum height out of the solder bonding sections; and a fourth step of solidifying the solder bonding sections so as to electrically connect the protruding electrodes of the semiconductor chip to the electrodes of the semiconductor substrate wherein at least two of the solder bonding sections contain holes with different ratios.
地址 Osaka JP