发明名称 |
Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium |
摘要 |
Provided a method including forming a laminated film where a first film and a second film are laminated on a substrate by performing a cycle a predetermined number of times under a condition where a borazine ring structure in a fourth process gas is maintained. The cycle includes: (a) forming the first film by performing a first set a predetermined number of times, wherein the first set includes supplying a first process gas and supplying a second process gas to the substrate; and (b) forming the second film by performing a second set a predetermined number of times, wherein the second set includes supplying a third process gas and supplying the fourth process gas to the substrate. |
申请公布号 |
US9330903(B2) |
申请公布日期 |
2016.05.03 |
申请号 |
US201514677199 |
申请日期 |
2015.04.02 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
Sano Atsushi;Hirose Yoshiro |
分类号 |
H01L21/02;C23C16/36;C23C16/455 |
主分类号 |
H01L21/02 |
代理机构 |
Volpe and Koenig, P.C. |
代理人 |
Volpe and Koenig, P.C. |
主权项 |
1. A method of manufacturing a semiconductor device, comprising forming a laminated film where a first film and a second film are laminated on a substrate by performing a cycle a predetermined number of times under a condition where a borazine ring structure in a fourth process gas is maintained, the cycle comprising:
(a) forming a film free of the borazine ring structure and including boron and nitrogen or a film free of the borazine ring structure and including boron, carbon and nitrogen as the first film by performing a first set a predetermined number of times, wherein the first set comprises: supplying a first process gas free of the borazine ring structure and including boron to the substrate and supplying a second process gas including nitrogen or including nitrogen and carbon to the substrate; and (b) forming a film having the borazine ring structure and including boron and nitrogen or a film having the borazine ring structure and including boron, carbon and nitrogen as the second film by performing a second set a predetermined number of times, wherein the second set comprises: supplying a third process gas to the substrate and supplying the fourth process gas having the borazine ring structure and an organic ligand to the substrate. |
地址 |
Tokyo JP |