Semiconductor device and power conversion device

摘要

A switching device includes a power semiconductor chip, and a drive circuit which drives the power semiconductor chip. In the power semiconductor chip, a path through which a main current flows is connected to a first source terminal, and a ground terminal of the drive circuit is connected to a second source terminal of the power semiconductor chip. As a result, a gate drive path is separated from the path through which the main current flows, and therefore, the influence of induced electromotive force which is generated due to source parasitic inductance, on a gate-source voltage, is reduced.

主权项

1. A semiconductor device comprising a power semiconductor chip, wherein:
the power semiconductor chip includes:
a substrate,a semiconductor multilayer arrangement formed on the substrate,a source electrode and a drain electrode formed on the semiconductor multilayer arrangement with a space between the source electrode and the drain electrode,a gate electrode formed between the source electrode and the drain electrode,a drain lead trace, a first source lead trace, and a second source lead trace, anda first terminal, a second terminal, a third terminal, and a fourth terminal, and the gate electrode is connected to the first terminal, the drain electrode and the second terminal are connected together through the drain lead trace, the source electrode and the third terminal are connected together through the first source lead trace, the source electrode and the fourth terminal are connected together through the second source lead trace, and the second terminal and the third terminal are configured to cause a main current to flow between the second terminal and the third terminal.