| 发明名称 |
Utlraviolet light emitting devices and methods of fabrication |
| 摘要 |
An ultraviolet light emitting semiconductor chip, its use in a LED, and methods of its fabrication are disclosed. The semiconductor chip can include a buffer layer of AlxGa1-xN, where 0<x≦1 having a thickness from about 10 μm to about 3 mm and defining apertures in the thickness of the buffer layer formed due to lateral overgrowth of the buffer layer over a grooved basal substrate. A n-junction LED layer overlying the buffer layer, a multiple quantum well LED layer overlying the n-junction LED layer, and a p-junction LED layer overlying the multiple quantum well LED layer are also included in the chip, where all of the LED layers comprise AlxGa1-xN, where 0<x≦1. |
| 申请公布号 |
US9331240(B2) |
申请公布日期 |
2016.05.03 |
| 申请号 |
US200912480304 |
申请日期 |
2009.06.08 |
| 申请人 |
University of South Carolina |
发明人 |
Khan M. Asif;Fareed Qhalid;Adivarahan Vinod |
| 分类号 |
H01L33/12;H01L21/02;H01L33/00;H01L33/20 |
主分类号 |
H01L33/12 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of making a semiconductor chip for use in a light emitting device, the method comprising
forming a buffer layer to a thickness of from about 10 μm to about 30 mm over a surface of a basal substrate defining a plurality of grooves, wherein the buffer layer comprises AlxGa1-xN, where 0<x≦1, and defines apertures extending from the grooves of the surface of the basal substrate into the thickness of the buffer layer, and wherein a growth mode transition is performed during the formation of the buffer layer from a non-pulse growth mode to a pulse growth mode; forming a n-junction LED layer over the buffer layer, wherein the n-junction LED layer comprises AlxGa1-xN, where 0<x≦1; forming a multiple quantum well LED layer over the n-junction LED layer, wherein the multiple quantum well LED layer comprises AlxGa1-xN, where 0<x≦1; and forming a p-junction LED layer over the multiple quantum well LED layer, wherein the p-junction LED layer comprises AlxGa1-xN, where 0<x≦1. |
| 地址 |
Columbia SC US |
