Method for producing optical semiconductor device

摘要

A method for producing optical semiconductor devices includes: forming a stacked semiconductor layer on a device substrate to provide an epitaxial substrate having a size corresponding to a section arrangement; forming, on the epitaxial substrate, a mask having a pattern for a semiconductor mesa and for a trench of at least one optical semiconductor device, a width of the trench in the pattern being determined according to a trench width map in which trench width is based upon an in-plane distribution of the thickness of a resin layer of the at least one device, and upon a correlation between the thickness of the resin layer and the trench width; forming a trench structure including the semiconductor mesa and the trench by etching the stacked semiconductor layer using the mask; forming a resin layer on the trench structure; and forming an opening on the semiconductor mesa by etching the resin layer.

主权项

1. A method for producing a plurality of optical semiconductor devices in a corresponding plurality of sections constituting a section arrangement on a device substrate, at least one of the semiconductor devices having a trench, a semiconductor mesa, and a resin layer, the method comprising the steps of:
forming a stacked semiconductor layer on the device substrate to provide an epitaxial substrate having a size corresponding to the section arrangement; forming, on the epitaxial substrate, a mask having a pattern for the semiconductor mesa and for the trench of the at least one optical semiconductor device, a width of the trench in the pattern being determined according to a trench width map in which trench width is based upon an in-plane distribution of the thickness of the resin layer, and upon a correlation between the thickness of the resin layer and the trench width; forming a trench structure including the semiconductor mesa and the trench by etching the stacked semiconductor layer by using the mask; forming a resin layer on the trench structure, the resin layer being formed on an upper surface and a side surface of the semiconductor mesa; and forming an opening on the semiconductor mesa by etching the resin layer, the upper surface of the semiconductor mesa being exposed through the opening.