Polishing agent, polishing method, and manufacturing method of semiconductor integrated circuit device

摘要

A first polishing agent contains: cerium oxide particles; and water, wherein, in IR spectrum of the cerium oxide particle, a value A found by a formula below from a ratio (I/I′) between a value I of an absorbance of 3566 cm−1 and a value I′ of an absorbance of 3695 cm−1, and a crystallite diameter XS, is 0.08 or less.
A=(I/I′)/XS ;A second polishing agent contains: cerium oxide particles; and water, wherein, in the cerium oxide particle, a deviation B of a lattice constant found by a formula below from a theoretical lattice constant (a′) and a lattice constant (a) measured by powder X-ray diffraction, is −0.16% or more.
B(%)=(1−a/a′)×100

主权项

1. A polishing agent comprising:
cerium oxide particles; and water, wherein, in said cerium oxide particle, a value A found by a formula below from a ratio (I/I′) between a value I of an absorbance of 3566 cm−1 and a value I′ of an absorbance of 3695 cm−1, with an absorbance of 3900 cm−1 of an infrared absorption spectrum as a criterion, and a crystallite diameter XS measured by X-ray diffraction is 0.08 or less
A=(I/I′)/XS.