发明名称 Ultra-sharp nanoprobes and methods
摘要 Methods for fabricating ultra-sharp nanoprobes can include the steps of providing a wafer, and patterning a silicon layer on the wafer with a plurality of geometric structures. The geometric structures can be patterned using electron-beam lithography or photolithography, and can have circular, triangular or other geometric shapes when viewed in top plan. The methods can further include the step of depositing a non-uniform cladding on the geometric structures using plasma enhanced chemical vapor deposition (PECVD) techniques, and then wet-etching the wafer. The non-uniform nature of the cladding can result in more complete etching in the areas where the cladding has lower density and incomplete etching in the areas of higher density of the non-uniform cladding. The different etching rates in the proximity of at least adjacent two geometric structures can result in the formation of ultra-sharp nanoprobes.
申请公布号 US9329203(B1) 申请公布日期 2016.05.03
申请号 US201514697129 申请日期 2015.04.27
申请人 The United States of America, as Represented by the Secretary of the Navy 发明人 Ptasinski Joanna;Russell Stephen D.
分类号 G01Q60/38;B82Y15/00 主分类号 G01Q60/38
代理机构 SSC Pacific Patent Office 代理人 SSC Pacific Patent Office ;Samora Arthur K.;Eppele Kyle
主权项 1. A method for fabricating a nanoprobe, comprising the sequential steps of: A) providing a wafer; B) patterning said wafer with a plurality of geometric structures; C) dry-etching said wafer; D) depositing a non-uniform cladding on said wafer; E) wet-etching said wafer from said step D); and,at least two of said plurality of geometric structures cooperating with said non-uniform cladding to establish said nanoprobes when said step E) is accomplished.
地址 Washington DC US