| 发明名称 | Three-dimensional semiconductor device | ||
| 摘要 | A semiconductor device includes a stacked structure having first conductive layers stacked stepwise and first insulating layers interposed between the first conductive layers, wherein undercuts are formed under the first conductive layers and each of the first conductive layers includes a first region covered by the first conductive layer and a second region extending from the first region, contact pads coupled to the second regions of the respective first conductive layers, and a liner layer formed on the contact pads and filling the undercuts. | ||
| 申请公布号 | US9331082(B2) | 申请公布日期 | 2016.05.03 |
| 申请号 | US201414289211 | 申请日期 | 2014.05.28 |
| 申请人 | SK Hynix Inc. | 发明人 | Lee Ki Hong;Pyi Seung Ho;Baek Ji Yeon |
| 分类号 | H01L23/528;H01L23/532;H01L27/105;H01L27/115 | 主分类号 | H01L23/528 |
| 代理机构 | IP & T Group LLP | 代理人 | IP & T Group LLP |
| 主权项 | 1. A semiconductor device, comprising: a stacked structure including first conductive layers stacked stepwise and spaced from each other, and first insulating layers interposed between the first conductive layers, wherein undercuts are formed under the first conductive layers and each of the first conductive layers includes a first region covered by the first conductive layer located thereover and a second region extending from the first region; contact pads coupled to the second regions of the respective first conductive layers; and a liner layer formed on the contact pads and filling the undercuts. | ||
| 地址 | Gyeonggi-do KR | ||