| 摘要 |
The present invention relates to a method for improving structural and electrical characteristics of polythiophene thin films by using sequential solvent casting, and more particularly, to a method for improving structural and electrical characteristics of polythiophene thin films, the polythiophene thin films processed according to the method, and field-effect transistors (FETs) having the same, in which the polythiophene (e.g. P3HT) thin films are directly exposed to a two-component solvent system obtained by mixing a marginal solvent and a good solvent such that solubility adjustment is achieved by solvent process other than conventional thermal post-treatment, thereby improving molecular ordering, crystallinity, and charge mobility of the thin films in a simple and inexpensive way. |
