| 摘要 |
A LIQUID COMPOSITION COMPRISING (A) AT LEAST ONE POLAR ORGANIC SOLVENT, SELECTED FROM THE GROUP CONSISTING OF SOLVENTS EXHIBITING IN THE PRESENCE OF FROM 0.06 TO 4% BY WEIGHT OF DISSOLVED TETRAMETHYLAMMONIUM HYDROXIDE (B), THE WEIGHT PERCENTAGE BEING BASED ON THE COMPLETE WEIGHT OF THE RESPECTIVE TEST SOLUTION (AB), A CONSTANT REMOVAL RATE AT 50°C FOR A 30 NM THICK POLYMERIC BARRIER ANTI-REFLECTIVE LAYER CONTAINING DEEP UV ABSORBING CHROMOPHORIC GROUPS, (B) AT LEAST ONE QUATERNARY AMMONIUM HYDROXIDE, AND (C) AT LEAST ONE AROMATIC AMINE CONTAINING AT LEAST ONE PRIMARY AMINO GROUP, A METHOD FOR ITS PREPARATION AND A METHOD FOR MANUFACTURING ELECTRICAL DEVICES, EMPLOYING THE LIQUID COMPOSITION AS A RESIST STRIPPING COMPOSITION AND ITS USE FOR REMOVING NEGATIVE-TONE AND POSITIVE-TONE PHOTORESISTS AND POST ETCH RESIDUES IN THE MANUFACTURE OF 3D STACKED INTEGRATED CIRCUITS AND 3D WAFER LEVEL PACKAGINGS BY WAY OF PATTERNING THROUGH SILICON VIAS AND/OR BY PLATING AND BUMPING. |
