发明名称 HYBRID DIMM STRUCTURE AND DRIVING METHOD THEREOF
摘要 Provided are a hybrid dual in-line memory module (DIMM) structure which does not reduce the operating speed of a main memory while utilizing an empty DIMM slot, and a driving method of a hybrid DIMM structure. The hybrid DIMM structure comprises: a data line including first and second data lines, and forming one channel; a first DIMM connected to the first data line, and including first and second memories which are volatile memories; and a second DIMM connected to the second data line, and including third and fourth memories which are volatile memories.
申请公布号 KR20160046391(A) 申请公布日期 2016.04.29
申请号 KR20140141815 申请日期 2014.10.20
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, SANG KIL
分类号 G11C5/02 主分类号 G11C5/02
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