发明名称 SEMICONDUCTOR LASER
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor laser capable of reducing working voltage.SOLUTION: The semiconductor laser includes: a semiconductor layer which is formed over a substrate including an active layer; a carrier injection layer which is formed on the semiconductor layer including a transparent conductive film for injecting a charge carrier into the active layer; an optical field adjustment layer which is disposed in a selectively area on the carrier injection layer for adjusting an optical field of a laser beam, and which has an insulation property; a first electrode electrically connected to a substrate; and a second electrode electrically connected to the carrier injection layer.SELECTED DRAWING: Figure 1
申请公布号 JP2016066670(A) 申请公布日期 2016.04.28
申请号 JP20140193772 申请日期 2014.09.24
申请人 SONY CORP 发明人 AZUMA SHINICHI
分类号 H01S5/22;H01S5/343 主分类号 H01S5/22
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