SEMICONDUCTOR CHIP ARRANGEMENT

摘要

A method for processing a semiconductor carrier is provided, the method including: providing a semiconductor carrier including a doped substrate region and a device region disposed over a first side of the doped substrate region, the device region including at least part of one or more electrical devices; and implanting ions into the doped substrate region to form a gettering region in the doped substrate region of the semiconductor carrier.

主权项

1. A semiconductor chip arrangement comprising:
a semiconductor wafer substrate including a doped substrate region and a device region disposed over a first side of the doped substrate region; one or more electrical devices formed at least partially in the device region of the semiconductor carrier; a gettering region comprising hydrogen-decorated intrinsic point defect complexes formed in the doped substrate region of the semiconductor carrier; and a metal layer disposed over a second side of the doped substrate region.