ORGANIC P-N JUNCTION BASED INFRARED DETECTION DEVICE AND MANUFACTURING METHOD THEREOF AND INFRARED IMAGE DETECTOR USING SAME

摘要

The present invention provides an organic p-n junction based infrared detection device and a manufacturing method thereof and an infrared image detector using the device. The organic p-n junction based infrared detection device (40) includes: an active glass substrate (42) and a packaging glass substrate (44) that are arranged to be parallel to and opposite to each other, a plurality of organic p-n junctions (43) arranged between the active glass substrate (42) and the packaging glass substrate (44), and a package material (48) arranged on a circumferential marginal area of the active glass substrate (42) and the packaging glass substrate (44). The plurality of organic p-n junctions (43) is arranged in the form of a matrix on the active glass substrate (42). Based on the organic p-n junctions, the present invention has a simple manufacturing process and low material toxicity and is inexpensive, diversified, and of various sources and the infrared image detector can be manufactured on a flexible substrate and can expand the imaging angle.

主权项

1. An organic p-n junction based infrared detection device, comprising: an active glass substrate and a packaging glass substrate that are arranged to be parallel to and opposite to each other, a plurality of organic p-n junctions arranged between the active glass substrate and the packaging glass substrate, and a package material arranged on a circumferential marginal area of the active glass substrate and the packaging glass substrate, the plurality of organic p-n junctions being arranged in a matrix on the active glass substrate.