| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a crystalline laminate structure having a β-GaO-based film which has a small half-value width and superior semiconductor characteristics.SOLUTION: There is provided a method of manufacturing a crystalline laminate structure in which a crystalline oxide thin film is formed by crystal growth on a ground substrate 20 arranged in a film deposition chamber 27 by supplying raw material fine particles, produced by making a raw material solution 24a into fine particles, into the film deposition chamber 27 with a carrier gas 22, the ground substrate 20 including a crystal body, having a β-gallium structure, as a main component in part or the whole of a surface thereof, and the crystalline oxide thin film including a crystalline oxide β-GaOhaving a β-gallium structure as a main component.SELECTED DRAWING: Figure 2 |
