发明名称 |
METHOD FOR MANUFACTURING STORAGE DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a storage device at lower cost.SOLUTION: A method for manufacturing a storage device, comprising: forming a block copolymer layer 20 including a first polymer and a second polymer having lower surface energy than the first polymer on a substrate 10; subjecting the block copolymer layer 20 to heat treatment and separating the block copolymer layer 20 so that a first phase 20a including the first polymer and extending in a first direction and a second phase 20b including the second polymer and extending in the first direction are alternately arranged; selectively forming a first metal wiring layer 12 extending in the first direction on a surface of the first phase 20a; forming a memory layer 16 whose resistance changes when voltage is applied on the first metal wiring layer 12; and forming a second metal wiring layer 14 extending in the second direction crossing the first direction on the memory layer 16.SELECTED DRAWING: Figure 1 |
申请公布号 |
JP2016066644(A) |
申请公布日期 |
2016.04.28 |
申请号 |
JP20140193109 |
申请日期 |
2014.09.22 |
申请人 |
TOSHIBA CORP |
发明人 |
HIENO ATSUSHI;ASAKAWA KOUJI |
分类号 |
H01L27/105;H01L27/28;H01L45/00;H01L49/00;H01L51/05;H01L51/30;H01L51/40 |
主分类号 |
H01L27/105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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