发明名称 METHOD FOR MANUFACTURING STORAGE DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing a storage device at lower cost.SOLUTION: A method for manufacturing a storage device, comprising: forming a block copolymer layer 20 including a first polymer and a second polymer having lower surface energy than the first polymer on a substrate 10; subjecting the block copolymer layer 20 to heat treatment and separating the block copolymer layer 20 so that a first phase 20a including the first polymer and extending in a first direction and a second phase 20b including the second polymer and extending in the first direction are alternately arranged; selectively forming a first metal wiring layer 12 extending in the first direction on a surface of the first phase 20a; forming a memory layer 16 whose resistance changes when voltage is applied on the first metal wiring layer 12; and forming a second metal wiring layer 14 extending in the second direction crossing the first direction on the memory layer 16.SELECTED DRAWING: Figure 1
申请公布号 JP2016066644(A) 申请公布日期 2016.04.28
申请号 JP20140193109 申请日期 2014.09.22
申请人 TOSHIBA CORP 发明人 HIENO ATSUSHI;ASAKAWA KOUJI
分类号 H01L27/105;H01L27/28;H01L45/00;H01L49/00;H01L51/05;H01L51/30;H01L51/40 主分类号 H01L27/105
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