| 摘要 |
PROBLEM TO BE SOLVED: To provide an infrared photo-detection apparatus, with satisfactory productivity, including a light absorption layer which has crystallinity capable of providing a desired photo-detection property and is sensitive to infrared rays, and capable of reducing decrease of infrared rays introduced to the light absorption layer by rear-face incidence.SOLUTION: A light absorption layer 29b includes a compound semiconductor containing antimony as a group V. A semiconductor laminate 29 for a photodiode 17a forms a junction 31 on a silicon substrate 27. High conductivity can be applied to the silicon substrate 27 by selectively adding a dopant and in the aspect of band gap, light in an infrared wavelength band is transmissible through a silicon semiconductor. The transmitted light is incident through the silicon substrate 27 to the light absorbing layer 29b of each photodiode. A first surface 27a of the silicon substrate 27 includes a first semiconductor of first specific resistance, and a second surface 27b of the silicon substrate 27 includes a second semiconductor of second specific resistance. A region 27c formed from the first semiconductor is thinner than a region 27d formed from the second semiconductor.SELECTED DRAWING: Figure 1 |
