发明名称 LIGHT EMITTING DIODE CHIP HAVING ELECTRODE PAD
摘要 Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.
申请公布号 US2016118564(A1) 申请公布日期 2016.04.28
申请号 US201514984829 申请日期 2015.12.30
申请人 Seoul Viosys Co., Ltd. 发明人 Kim Ye Seul;Kim Kyoung Wan;Yoon Yeo Jin;Oh Sang Hyun;Lee Keum Ju;Lee Jin Woong;Jeong Da Yeon;Woo Sang Won
分类号 H01L33/62;H01L33/32;H01L33/24;H01L33/14;H01L33/52 主分类号 H01L33/62
代理机构 代理人
主权项 1. A light emitting diode device comprising: a light emitting structure including a first conductive-type semiconductor layer, a second conductive-type semiconductor layer located over the first conductive-type semiconductor layer, and an active layer interposed between the first conductive-type semiconductor layer and the second conductive-type semiconductor layer; a transparent conductive layer formed over the second conductive-type semiconductor layer; a second electrode pad formed over the transparent conductive layer; a second electrode extension extending from the second electrode pad; and a current blocking layer interposed between the transparent conductive layer and the second conductive-type semiconductor layer, wherein the transparent conductive layer has an opening exposing at least a portion of the current blocking layer, and the second electrode extension includes a first portion electrically connected to the transparent conductive layer and a second portion electrically insulated from the transparent conductive layer.
地址 Ansan-si KR