| 发明名称 |
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME |
| 摘要 |
A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate. The semiconductor device structure includes a first dielectric layer over the semiconductor substrate. The semiconductor device structure includes a first conductive line embedded in the first dielectric layer. The semiconductor device structure includes a second dielectric layer over the first dielectric layer and the first conductive line. The semiconductor device structure includes a second conductive line over the second dielectric layer. The second dielectric layer is between the first conductive line and the second conductive line. The semiconductor device structure includes conductive pillars passing through the second dielectric layer to electrically connect the first conductive line to the second conductive line. The conductive pillars are spaced apart from each other. |
| 申请公布号 |
US2016118336(A1) |
申请公布日期 |
2016.04.28 |
| 申请号 |
US201414524228 |
申请日期 |
2014.10.27 |
| 申请人 |
Taiwan Semiconductor Manufacturing Co., Ltd |
发明人 |
YANG Tai-I;LIAO Yu-Chieh;LIN Tien-Lu;BAO Tien-I |
| 分类号 |
H01L23/522;H01L21/768;H01L29/78 |
主分类号 |
H01L23/522 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device structure, comprising:
a semiconductor substrate; a first dielectric layer over the semiconductor substrate; a first conductive line embedded in the first dielectric layer; a second dielectric layer over the first dielectric layer and the first conductive line; a second conductive line over the second dielectric layer, wherein the second dielectric layer is between the first conductive line and the second conductive line; and a plurality of conductive pillars passing through the second dielectric layer to electrically connect the first conductive line to the second conductive line, wherein the conductive pillars are spaced apart from each other. |
| 地址 |
Hsin-Chu TW |
