| 发明名称 |
ANODIZED METAL ON CARRIER WAFER |
| 摘要 |
A method for processing a semiconductor wafer where an electrostatic layer is located on a surface of a handling wafer is used so the surface of the handling wafer may be handled with machinery that uses an electrostatic chuck. The electrostatic layer may be manipulated to increase or decrease the conductivity, and may be removed to allow light to pass through the handling wafer. |
| 申请公布号 |
US2016118283(A1) |
申请公布日期 |
2016.04.28 |
| 申请号 |
US201414525254 |
申请日期 |
2014.10.28 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Arvin Charles L.;Cox Harry D.;Lubguban Jorge A.;Schuler Jennifer D. |
| 分类号 |
H01L21/683;B32B38/10;B32B37/18 |
主分类号 |
H01L21/683 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for processing a semiconductor wafer comprising:
bonding a semiconductor wafer to a handling wafer using an adhesive and release layer, wherein the handling wafer comprises an electrostatic layer covering a surface of a transparent handling material; processing the semiconductor wafer while it is bonded to the handling wafer; ablating the adhesive and release layer through the transparent handler; and removing the semiconductor wafer from the handling wafer. |
| 地址 |
Armonk NY US |
