METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

A method for fabricating a semiconductor device includes: forming a first film on a nitride semiconductor layer so as to contact the nitride semiconductor layer and have a thickness equal to or larger than 1 nm and equal to or smaller than 5 nm, the first film being made of silicon nitride having a composition ratio of silicon to nitrogen larger than 0.75, silicon oxide having a composition ratio of silicon to oxygen larger than 0.5, or aluminum; and forming a source electrode, a gate electrode and a drain electrode on the nitride semiconductor layer.

主权项

1. A method for fabricating a semiconductor device comprising:
forming a first film that contacts with a surface of a nitride semiconductor layer by an atomic layer deposition method, the first film being made of silicon nitride having a composition ratio of silicon to nitrogen larger than 0.75, silicon oxide having a composition ratio of silicon to oxygen larger than 0.5, or aluminum, the first film having a first surface and a second surface that is opposite to the first surface, the first surface contacting the surface of the nitride semiconductor layer; forming a source electrode, a gate electrode and a drain electrode on the nitride semiconductor layer; and forming a second film on the second surface of the first film by the atomic layer deposition method, the second film comprising a material selected from a group consisting of silicon nitride, silicon oxide, aluminum oxide or aluminum nitride.