| 发明名称 |
Method for Producing an Integrated Circuit Pointed Element, and Corresponding Integrated Circuit |
| 摘要 |
A method for producing an integrated circuit pointed element is disclosed. An element has a projection with a concave part directing its concavity towards the element. The element includes a first etchable material. A zone is formed around the concave part of the element. The zone includes a second material that is less rapidly etchable than the first material for a particular etchant. The first material and the second material are etched with the particular etchant to form an open crater in the concave part and thus to form a pointed region of the element. |
| 申请公布号 |
US2016116631(A1) |
申请公布日期 |
2016.04.28 |
| 申请号 |
US201514985037 |
申请日期 |
2015.12.30 |
| 申请人 |
STMicroelectronics (Rousset) SAS |
发明人 |
Marzaki Abderrezak;Goasduff Yoann;Bidal Virginie;Fornara Pascal |
| 分类号 |
G01V7/04;B81C1/00;H01H37/32;H01L29/423;B81B3/00;H01H37/04;H01L21/3213;H01L49/02 |
主分类号 |
G01V7/04 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for producing an integrated circuit pointed element, the method comprising:
forming an element having a projection with a concave part directing its concavity towards the element, the element comprising a first etchable material; forming a zone around the concave part of the element, the zone comprising a second material that is less rapidly etchable than the first material for a particular etchant; and etching the first material and the second material with the particular etchant to form an open crater in the concave part thereby forming a pointed region of the element. |
| 地址 |
Rousset FR |
