| 摘要 |
PROBLEM TO BE SOLVED: To improve a voltage difference between data values and reducing output voltage variations.SOLUTION: A circuit includes a current feedback bias p-channel metal-oxide-semiconductor (PMOS) transistor, a load PMOS transistor, and a clamp transistor configured to clamp a voltage applied to a resistance based memory element during a sensing operation. A gate of the load PMOS transistor is controlled by an output of an operational amplifier.SELECTED DRAWING: Figure 1 |
