| 摘要 |
PROBLEM TO BE SOLVED: To suppress absorption of light from an active layer by an n-type contact layer to improve light extraction efficiency.SOLUTION: A semiconductor light emitting element includes an n-type semiconductor layer 10, an active layer 30 provided on a part of the n-type semiconductor layer 10, a p-type semiconductor layer 20 provided on the active layer 30, an n-side electrode 40 provided on the other part of the n-type semiconductor layer 10 and a p-side electrode 50 provided on a p-type semiconductor layer 20. An emission peak wavelength of a light emitting element is not less than 240 nm and not more than 280 nm. The n-type semiconductor layer 10 has a low-Al composition layer 11 on which the n-side electrode 40 is provided and composed of AlGaN(0.60<X≤0.65), and a high-Al composition layer 12 which contacts the low-Al composition layer 11 and composed of AlGaN(0.70≤Y<1) from the active layer 30 side in this order. A thickness of the low-Al composition layer 11 is made thinner than a thickness of the high-Al composition layer 12.SELECTED DRAWING: Figure 1 |
