APPARATUSES AND METHODS FOR SETTING A SIGNAL IN VARIABLE RESISTANCE MEMORY

摘要

An example of a method reads a spin torque transfer (STT) memory cell, and writes the STT memory cell using information obtained during the reading of the STT memory cell to set a pulse to write the STT memory cell. An example of an apparatus includes a STT memory cell and read/write circuitry coupled to the STT memory cell to determine a read current (IREAD) through the STT memory cell and to set a pulse to write the STT memory cell using IREAD. Additional embodiments are disclosed.

主权项

1. A method, comprising:
reading a variable resistance memory cell; and writing the memory cell using information obtained in relation to the reading of the memory cell to set a signal to write the memory cell.