发明名称 |
WEAK ERASE AFTER PROGRAMMING TO IMPROVE DATA RETENTION IN CHARGE-TRAPPING MEMORY |
摘要 |
Techniques are provided to improve long term data retention in a charge-trapping memory device. In addition to a primary charge-trapping layer in which most charges are stored, the memory device may include a tunneling layer comprising an engineered tunneling barrier such as oxide-nitride-oxide. The nitride in the tunneling layer may also store some charges after programming. After the programming, a data retention operation is performed which de-traps some electrons from the tunneling layer, in addition to injecting holes into the tunneling layer which form neutral electron-hole dipoles in place of electrons. These mechanisms tend to lower threshold voltage. Additionally, the data retention operation redistributes the electrons and the holes inside the charge-trapping layer, resulting in an increase in threshold voltage which roughly cancels out the decrease when the data retention operation is optimized. |
申请公布号 |
WO2016064511(A1) |
申请公布日期 |
2016.04.28 |
申请号 |
WO2015US51279 |
申请日期 |
2015.09.21 |
申请人 |
SANDISK TECHNOLOGIES INC. |
发明人 |
CHEN, HONG-YAN;DONG, YINGDA;LU, CHING-HUANG |
分类号 |
G11C11/56;G11C16/04;G11C16/34 |
主分类号 |
G11C11/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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