| 摘要 |
A method for preparing an integrated circuit device package can comprise the steps of: preparing a silicon-on-insulator (SOI) substrate which has sequentially laminated from the bottom a second silicon substrate, an insulating film, and a first silicon substrate that has a flexible thickness so as to be bent or folded; forming a circuit pattern on one side of the first silicon substrate; separating the first silicon substrate and the second silicon substrate from each other by removing the insulating film by means of etching on the insulating film; and adhering a lower substrate, which is formed from a flexible material and has a flexible thickness so as to be bent or folded, on the other side of the first silicon substrate which is opposite from the one side of the first silicon substrate having the circuit pattern formed thereon. |
