| 摘要 |
PROBLEM TO BE SOLVED: To enhance the resistance of a photoelectric conversion device against delamination.SOLUTION: A photoelectric conversion device according to an embodiment comprises at least: a substrate; a lower electrode on the substrate, having an electrode layer and an interface intermediate layer; a p-type compound semiconductor layer formed on the interface intermediate layer; and an n-type compound semiconductor layer formed on the p-type compound semiconductor layer. The interface intermediate layer is composed of a compound thin film including at least one element X selected from a group consisting of Mo or W included in the electrode layer, and S, Se and Te. The photoelectric conversion device has, in the interface intermediate layer, a crystal phase of the compound thin film and an amorphous phase covering the crystal phase.SELECTED DRAWING: Figure 1 |
