| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of evaluating various characteristics of a semiconductor film in a non-contact manner, or to provide a transistor with a small in-plane variation of the semiconductor film, or to provide a transistor with a low defect level density of the semiconductor film, or to provide a transistor with stable electric characteristics, or to provide a transistor with a high frequency characteristic, or to provide a transistor with a small off-state current, or to provide a semiconductor device having the transistor.SOLUTION: Provided is a method of evaluating a semiconductor film of a semiconductor device that has an insulating film, the semiconductor film, and a conductive film, the semiconductor film having a region where the semiconductor film and the conductive film are overlapped with each other via the insulating film. The method includes: performing plasma processing after formation of the insulating film; and calculating a peak value of a reflective index of microwave of the semiconductor film by the microwave photoconduction attenuation method after the plasma processing to estimate a hydrogen concentration in the semiconductor film.SELECTED DRAWING: Figure 1 |
