| 发明名称 |
Light-Emitting Element |
| 摘要 |
An electrode layer having high reflectance and a light-emitting element having high emission efficiency are provided. The light-emitting element includes a first electrode layer, a second electrode layer, and an EL layer between the first electrode layer and the second electrode layer. The first electrode layer includes a conductive layer and an oxide layer in contact with the conductive layer. The conductive layer has a function of reflecting light. The oxide layer includes In and M (M represents Al, Si, Ti, Ga, Y, Zr, Sn, La, Ce, Nd, or Hf). A content of the M in the oxide layer is higher than or equal to a content of the In. |
| 申请公布号 |
US2016118625(A1) |
申请公布日期 |
2016.04.28 |
| 申请号 |
US201514887980 |
申请日期 |
2015.10.20 |
| 申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
Uesaka Shogo;Sasaki Toshiki;Ohsawa Nobuharu |
| 分类号 |
H01L51/52;H01L27/32;H01L51/50 |
主分类号 |
H01L51/52 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A light-emitting element comprising:
a first electrode layer; a second electrode layer; and an EL layer between the first electrode layer and the second electrode layer, wherein the first electrode layer comprising:
a conductive layer; andan oxide layer in contact with the conductive layer,wherein the conductive layer has a function of reflecting light,wherein the oxide layer includes In and M (M represents Al, Si, Ti, Ga, Y, Zr, Sn, La, Ce, Nd, or Hf), andwherein a content of the M in the oxide layer is higher than or equal to a content of the In. |
| 地址 |
Kanagawa-Ken JP |
