| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing device or a plasma processing method which can reduce variation of a shape obtained through the processing.SOLUTION: A plasma processing device has a processing chamber 104, a sample table 111 which is disposed at the lower portion of the processing chamber and on which a wafer 112 is mounted, and an introducing hole 102 which is disposed above the sample table and through which processing gas is introduced into the processing chamber, and performing etching processing on a film structure disposed on the upper surface of the wafer with plasma which is formed by using the processing gas. The film structure is configured on a board to have a polysilicon film as a processing target. After execution of a coating step of supplying coating gas to form plasma and coating a membrane containing Si as a component on the surface of a member in the processing chamber, an etching processing for performing etching processing on the polysilicon film on the upper surface of the wafer is executed, and a metal cleaning step for forming plasma in the processing chamber before the etching processing step and reducing metal contained in the membrane is executed.SELECTED DRAWING: Figure 1 |
