| 发明名称 |
FILM INDUCED INTERFACE ROUGHENING AND METHOD OF PRODUCING THE SAME |
| 摘要 |
Various embodiments provide for a method for roughening a surface of a MEMs device or the surface of a CMOS surface. A first material can be deposited in a thin layer over a surface made of a second material. After heating, the first and second materials, they can partially melt and interdiffuse, forming an alloy. The first material can then be removed and the alloy is removed at the same time. The surface of the second material that is left behind has then been roughened due to the interdiffusion of the first and second materials. |
| 申请公布号 |
US2016115016(A1) |
申请公布日期 |
2016.04.28 |
| 申请号 |
US201514667169 |
申请日期 |
2015.03.24 |
| 申请人 |
INVENSENSE, INC. |
发明人 |
Liu Fang;Lim Martin;Shin Jong Il;Shin Jongwoo |
| 分类号 |
B81C1/00 |
主分类号 |
B81C1/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for roughening a surface, comprising:
layering a first material over the surface of a second material, wherein the first material and the second material are different materials; interdiffusing a portion of the first material and the second material at a predetermined temperature; and removing the first material, wherein the surface of the second material is roughened in response to removing the first material. |
| 地址 |
San Jose CA US |
