发明名称 SEMICONDUCTOR STRUCTURE WITH ACTIVE DEVICE AND DAMAGED REGION
摘要 A semiconductor structure is formed with an active layer having an active device including a body region. The active device is formed by top side processing in and on a top side of a semiconductor on insulator wafer. A damaged region is formed within a portion of the body region by bottom side processing at a bottom side of the semiconductor on insulator wafer, the damaged region having a structure sufficient to prevent a kink effect and self-latching in operation of the active device.
申请公布号 WO2016064702(A1) 申请公布日期 2016.04.28
申请号 WO2015US56151 申请日期 2015.10.19
申请人 SILANNA SEMICONDUCTOR U.S.A., INC. 发明人 NYGAARD, PAUL, A.;STUBER, MICHAEL, A.
分类号 H01L29/786 主分类号 H01L29/786
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