| 摘要 |
PROBLEM TO BE SOLVED: To provide a novel method capable of correcting phase defects without performing working at the inside of a reflective mask, as a phase defect correction method of a reflective mask for EUV exposure.SOLUTION: A pellicle 2 is attached to a reflective mask 1 for EUV exposure, light is made incident to the reflective mask 1 via the pellicle 2 at the same angle in wafer exposure, and a position 21, 28 where at least one of reflection light Lre reflected at a position of a phase defect 18 of the reflective mask 1 and incident light Lin heading toward the position of the phase defect 18 transmits through the pellicle 2 is specified. By performing pellicle working for increasing or decreasing the film thickness of the pellicle 2 at the specified transmitting position, a space projection image of reflection light from the position of the phase defect 18 is corrected.SELECTED DRAWING: Figure 1 |
