METAL-INSULATOR-METAL BACK END OF LINE CAPACITOR STRUCTURES

摘要

Embodiments of the present invention provide improved metal-insulator-metal (MIM) capacitors. In embodiments, series resistance is reduced by forming a via underneath the bottom plate of a MIM capacitor, leading to a metallization layer or intermediate metal sublayer. In embodiments, the MIM capacitor is formed with a corrugated shape to increase the plate surface area, allowing a thicker dielectric to be used, thereby mitigating leakage issues.

主权项

1. A semiconductor structure comprising:
a first metallization layer; an interlevel dielectric layer disposed on the first metallization layer; a second metallization layer disposed on the interlevel dielectric layer; a metal-insulator-metal (MIM) capacitor disposed within the interlevel dielectric layer, the MIM capacitor having a first plate, a capacitor dielectric layer, and a second plate, wherein the capacitor dielectric layer is disposed between the first plate and the second plate; a via from the second plate to a metal region within the first metallization layer; a via from the first plate to the second metallization layer; and a via from the metal region to the second metallization layer.